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ZXMN4A06K
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GS
Limit
40
20
Unit
V
V
Continuous drain current:
V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed drain current (c)
Continuous source current (body diode)
I D
I DM
I S
10.9
8.7
7.2
35.3
10.8
A
A
A
A
A
(b)
Pulsed source current (body diode) (c)
Power dissipation at T A =25°C (a)
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
Power dissipation at T A =25°C (d)
Linear derating factor
I SM
P D
P D
P D
35.3
4.2
33.6
9.5
76
2.15
17.2
A
W
mW/°C
W
mW/°C
W
mW/°C
Operating and storage temperature range T j :T stg
Thermal resistance
-55 to +150
°C
Parameter
Junction to ambient (a)
Junction to ambient (b)
Junction to ambient (d)
Symbol
R JA
R JA
R JA
Value
30
13.2
58
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 1 - March 2006
? Zetex Semiconductors plc 2005
2
www.zetex.com
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